View C5702_2029191.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. the semiconductor operations of mitsubishi electric and hitachi were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although hitachi, hitachi, ltd., hitachi semiconductors, and other hitachi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. renesas technology home page: http://www.renesas.com renesas technology corp. customer support dept. april 1, 2003 to all our customers
cautions keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein.
2sC5702 silicon npn epitaxial high frequency amplifier / oscillator ade-208-1414 (z) 1st. edition mar. 2001 features high gain bandwidth product f t = 8 ghz typ. high power gain and low noise figure ; pg = 13 db typ., nf = 1.05 db typ. at f = 900 mhz outline mfpak 1. emitter 2. base 3. collector 1 3 2 note: marking is ?s-?
2sC5702 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 6v emitter to base voltage v ebo 1.5 v collector current i c 50 ma collector power dissipation pc 80 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 15 18.5 ? vi c = 10 m a, i e = 0 collector cutoff current i cbo ?? 1 m av cb = 10 v, i e = 0 collector cutoff current i ceo ?? 1mav ce = 4 v, r be = emitter cutoff current i ebo ?? 10 ma v eb = 1.5v, i c = 0 dc current transfer ratio h fe 80 120 160 v v ce = 1 v, i c = 5 ma collector output capacitance cob ? 0.85 1.2 pf v cb = 1 v, i e = 0 f = 1 mhz gain bandwidth product f t 6.5 8.0 ? ghz v ce = 1 v, i c = 5 ma f = 1 mhz power gain pg 11 13 ? db v ce = 1 v, i c = 5 ma f = 900 mhz noise figure nf ? 1.05 1.9 db v ce = 1 v, i c = 5 ma f = 900 mhz
2sC5702 3 160 120 80 40 0 50 100 150 200 maximum collector dissipation curve collector power dissipation pc (mw) ambient temperature ta ( c) 12 5 10 20 50 100 0 40 80 120 160 200 dc current transfet ratio vs. collector current dc current transfer ratio h fe collector current i c (ma) collecter to emitter voltege v ce (v) collecter voltage vs. collecter to emitter voltege collecter voltege ic (ma) base to emitter voltage v be (v) collecter voltage vs. base to emitter voltege collecter voltege ic (ma) 50 40 30 20 10 0 0 0.4 0.8 1.2 0.2 0.6 1.0 2 5 0 20 30 40 50 10 1 34 i b =10 m a 60 m a 110 m a 160 m a 210 m a 260 m a 310 m a 360 m a 410 m a 460 m a v ce = 1 v
2sC5702 4 0110 0.6 0.8 1.0 1.2 1.4 0.4 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 i e = 0 f = 1 mhz collector input capacitance vs. emitter to base voltage input capacitance cib (pf) emitter to base voltage v eb (v) collector output capacitance vs. collector to base voltage collector output capacitance cob (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage reverse transfer capacitance cre (pf) collector to base voltage v cb (v) 0110 0.2 0.4 0.6 0.8 1.0 0 e: guard pin f = 1 mhz f = 1 mhz
2sC5702 5 12 5 10 20 50 100 0 4 8 12 16 20 collector current ic (ma) power gain pg (db) power gain vs. collector current 12 5 10 20 50 100 0.0 1.0 2.0 3.0 4.0 5.0 collector current ic (ma) noise figure nf (db) noise figure vs. collector current 2 v 1 v v ce = 3 v v ce = 3 v 2 v 1 v f = 900 mhz f = 900 mhz 12 5 10 20 50 100 0 4 8 12 16 20 v ce = 1 v gain bandwidth product vs. collector currnet gain bandwidth prodfuct f (ghz) t collector current ic (ma) 12 5 10 20 50 100 0 4 8 12 16 20 v ce = 1 v f = 1 mhz s 21 parameter vs. collector current s 21 parameter |s 21 | (db) collector current ic (ma)
2sC5702 6 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 - 10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .8 1 2 3 4 5 1.5 10 .2 .4 .6 scale: 10 / div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 scale: 10 / div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 - 10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .2 .4 .6 1 2 3 4 5 1.5 10 .8 ce v = 1 v, zo = 50 w ce v = 1 v, zo = 50 w ce v = 1 v, zo = 50 w ce v = 1 v, zo = 50 w 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) s11 parameter vs. frequency s21 paramter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency condition : condition : condition : condition :
2sC5702 7 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 - 10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 10 / div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 scale: 10 / div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 - 10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 ce v = 2 v, zo = 50 w ce v = 2 v, zo = 50 w ce v = 2 v, zo = 50 w ce v = 2 v, zo = 50 w 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) s11 parameter vs. frequency s21 paramter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency condition : condition : condition : condition :
2sC5702 8 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 - 10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 10 / div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 scale: 10 / div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 - 10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 ce v = 3 v, zo = 50 w ce v = 3 v, zo = 50 w ce v = 3 v, zo = 50 w ce v = 3 v, zo = 50 w 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) 100 to 2000 mhz (100 mhz step) (i c = 5ma) (i c = 20ma) s11 parameter vs. frequency s21 paramter vs. frequency s12 parameter vs. frequency s21 paramter vs. frequency condition : condition : condition : condition :
2sC5702 9 sparameter (v ce = 1 v, i c = 5 ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.832 -28.2 14.18 159.9 0.0347 74.2 0.927 -20.7 200 0.723 -55.3 12.19 141.4 0.0624 61.4 0.789 -38.8 300 0.636 -78.0 10.17 127.5 0.0806 52.8 0.644 -52.3 400 0.559 -95.2 8.43 117.9 0.0920 48.9 0.532 -61.8 500 0.513 -110.1 7.15 110.6 0.1001 46.8 0.447 -69.1 600 0.473 -121.4 6.15 105.0 0.1065 45.8 0.378 -75.3 700 0.462 -132.4 5.40 100.2 0.1124 46.0 0.327 -79.8 800 0.443 -139.7 4.84 96.4 0.1182 46.7 0.285 -84.6 900 0.432 -148.1 4.32 92.6 0.1236 47.6 0.250 -89.4 1000 0.435 -153.9 3.94 89.6 0.1294 48.7 0.223 -93.3 1100 0.420 -160.5 3.60 87.2 0.1351 49.5 0.200 -97.4 1200 0.438 -165.4 3.33 84.5 0.1410 50.9 0.181 -102.3 1300 0.428 -168.8 3.11 82.2 0.1471 51.9 0.163 -107.4 1400 0.442 -175.3 2.87 80.0 0.1537 53.2 0.151 -111.4 1500 0.444 -177.1 2.75 78.0 0.1601 54.3 0.138 -117.3 1600 0.448 177.3 2.57 76.1 0.1671 55.2 0.130 -121.8 1700 0.464 176.0 2.44 73.9 0.1739 56.2 0.124 -128.5 1800 0.460 172.7 2.34 72.7 0.1810 56.9 0.119 -135.6 1900 0.474 170.1 2.21 70.7 0.1888 57.8 0.116 -142.0 2000 0.481 168.3 2.13 69.1 0.1952 58.6 0.114 -148.5
2sC5702 10 sparameter (v ce = 1 v, i c = 20 ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.534 -68.4 30.97 140.9 0.0258 65.2 0.735 -45.4 200 0.467 -111.9 20.56 119.2 0.0390 57.4 0.489 -73.4 300 0.451 -135.2 14.57 107.9 0.0490 58.2 0.350 -91.3 400 0.434 -149.5 11.16 101.6 0.0581 60.5 0.276 -104.5 500 0.438 -159.1 9.02 97.1 0.0673 63.1 0.231 -115.5 600 0.430 -165.9 7.58 93.7 0.0772 65.0 0.201 -125.9 700 0.441 -172.5 6.52 90.8 0.0872 66.5 0.182 -135.2 800 0.442 -175.8 5.75 88.3 0.0974 67.7 0.170 -144.0 900 0.451 178.4 5.09 86.1 0.1081 68.5 0.164 -152.6 1000 0.456 175.8 4.62 84.0 0.1184 69.5 0.158 -160.2 1100 0.452 171.2 4.22 82.5 0.1291 69.7 0.157 -166.8 1200 0.470 169.0 3.87 80.5 0.1395 70.2 0.158 -173.0 1300 0.462 166.2 3.62 79.0 0.1504 70.2 0.158 -179.2 1400 0.485 162.5 3.34 77.7 0.1608 70.7 0.162 176.1 1500 0.483 162.0 3.16 75.6 0.1719 70.7 0.164 171.1 1600 0.494 158.4 2.98 74.5 0.1826 70.6 0.168 167.2 1700 0.505 157.3 2.81 72.8 0.1935 70.5 0.175 164.0 1800 0.503 155.6 2.69 72.0 0.2040 70.4 0.181 160.4 1900 0.525 152.6 2.54 70.5 0.2148 70.5 0.189 157.1 2000 0.523 152.4 2.45 69.0 0.2247 70.2 0.195 154.1
2sC5702 11 sparameter (v ce = 2 v, i c = 5 ma, zo =50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.837 -25.5 14.31 161.2 0.0306 75.8 0.938 -18.2 200 0.739 -50.1 12.50 143.5 0.0559 63.3 0.813 -34.5 300 0.646 -72.1 10.58 129.9 0.0736 55.0 0.674 -46.5 400 0.565 -88.6 8.85 120.2 0.0848 51.0 0.563 -54.9 500 0.513 -103.4 7.58 112.7 0.0928 48.7 0.476 -61.1 600 0.466 -114.0 6.56 106.9 0.0996 47.7 0.405 -66.1 700 0.444 -125.7 5.77 102.1 0.1055 48.0 0.351 -69.5 800 0.429 -133.3 5.17 98.1 0.1106 48.5 0.307 -72.7 900 0.412 -142.2 4.62 94.1 0.1162 49.2 0.269 -76.1 1000 0.411 -148.8 4.22 91.1 0.1214 50.0 0.239 -78.3 1100 0.395 -155.5 3.87 88.6 0.1276 51.2 0.215 -80.7 1200 0.410 -161.6 3.57 85.7 0.1331 52.3 0.192 -84.0 1300 0.401 -165.3 3.34 83.6 0.1387 53.4 0.171 -86.6 1400 0.413 -172.1 3.08 81.4 0.1447 54.6 0.156 -88.9 1500 0.417 -174.3 2.94 79.1 0.1510 55.8 0.139 -92.9 1600 0.415 -179.2 2.75 77.4 0.1579 56.4 0.128 -95.6 1700 0.431 177.8 2.63 75.0 0.1644 57.6 0.117 -100.4 1800 0.426 175.2 2.50 73.8 0.1709 58.4 0.106 -105.7 1900 0.447 171.4 2.38 71.8 0.1781 59.6 0.097 -112.2 2000 0.450 169.9 2.28 70.1 0.1850 60.2 0.090 -118.3
2sC5702 12 sparameter (v ce = 2 v, i c = 20 ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.548 -58.6 32.28 143.9 0.0231 67.8 0.777 -38.8 200 0.451 -99.9 22.20 121.9 0.0363 59.6 0.527 -62.6 300 0.415 -125.6 15.97 110.2 0.0464 60.1 0.373 -76.9 400 0.390 -141.4 12.32 103.5 0.0545 61.7 0.283 -86.7 500 0.392 -152.5 9.97 98.7 0.0632 63.8 0.226 -95.1 600 0.382 -160.9 8.41 95.2 0.0726 65.6 0.184 -102.9 700 0.387 -168.1 7.23 92.0 0.0823 67.1 0.155 -110.3 800 0.387 -172.8 6.39 89.5 0.0914 68.5 0.133 -118.3 900 0.390 -178.6 5.66 87.1 0.1019 69.2 0.117 -127.6 1000 0.399 178.2 5.13 85.0 0.1114 70.2 0.104 -136.9 1100 0.400 172.6 4.69 83.4 0.1213 70.6 0.097 -146.4 1200 0.412 170.4 4.29 81.5 0.1309 71.1 0.092 -156.2 1300 0.409 167.8 4.01 79.9 0.1411 71.1 0.091 -166.0 1400 0.433 163.6 3.70 78.6 0.1518 71.6 0.092 -174.7 1500 0.426 162.4 3.50 76.8 0.1615 71.4 0.093 176.8 1600 0.435 158.8 3.30 75.4 0.1714 71.5 0.097 170.5 1700 0.454 157.9 3.10 73.6 0.1817 71.8 0.103 165.0 1800 0.446 155.5 2.97 72.7 0.1918 71.2 0.109 159.1 1900 0.475 153.5 2.81 71.1 0.2021 71.3 0.117 155.2 2000 0.473 152.7 2.71 69.9 0.2113 71.1 0.125 150.3
2sC5702 13 sparameter (v ce = 3 v, i c = 5 ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.846 -24.1 14.25 161.9 0.0287 75.9 0.9420 -17.0 200 0.748 -48.1 12.56 144.7 0.0534 64.3 0.8245 -32.2 300 0.656 -69.0 10.71 131.2 0.0705 56.4 0.6904 -43.6 400 0.573 -84.9 9.03 121.3 0.0817 52.0 0.5802 -51.5 500 0.516 -99.3 7.75 113.8 0.0895 49.6 0.4932 -57.4 600 0.469 -110.6 6.72 108.0 0.0961 48.6 0.4224 -61.6 700 0.442 -121.8 5.92 102.9 0.1015 48.5 0.3680 -64.4 800 0.423 -130.4 5.31 99.0 0.1071 49.0 0.3229 -67.1 900 0.404 -139.8 4.75 95.2 0.1128 49.9 0.2856 -69.5 1000 0.399 -146.0 4.34 92.0 0.1177 50.7 0.2535 -71.2 1100 0.382 -153.0 3.97 89.3 0.1230 51.7 0.2285 -72.9 1200 0.397 -159.3 3.69 86.5 0.1289 53.2 0.2052 -74.8 1300 0.385 -163.3 3.44 84.5 0.1344 54.2 0.1839 -76.6 1400 0.400 -169.7 3.18 81.8 0.1400 55.1 0.1680 -78.0 1500 0.401 -171.9 3.03 79.7 0.1462 56.2 0.1496 -80.5 1600 0.399 -177.2 2.84 77.8 0.1528 57.4 0.1381 -82.1 1700 0.415 179.5 2.70 75.7 0.1590 58.2 0.1251 -85.4 1800 0.411 176.8 2.57 74.4 0.1658 59.0 0.1122 -89.0 1900 0.430 173.0 2.44 72.3 0.1727 60.1 0.1018 -93.2 2000 0.433 171.4 2.35 70.7 0.1793 61.0 0.0914 -97.8
2sC5702 14 sparameter (v ce = 3 v, i c = 20 ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.564 -54.4 32.56 145.1 0.0221 69.2 0.7913 -35.9 200 0.449 -94.6 22.76 123.2 0.0353 60.3 0.5457 -58.3 300 0.408 -119.2 16.50 111.2 0.0448 60.4 0.3871 -71.0 400 0.377 -136.7 12.76 104.4 0.0529 62.0 0.2929 -78.9 500 0.370 -148.4 10.36 99.6 0.0618 64.1 0.2311 -85.4 600 0.360 -157.6 8.71 95.8 0.0707 65.9 0.1861 -91.3 700 0.365 -165.0 7.52 92.7 0.0801 67.5 0.1524 -96.6 800 0.364 -170.4 6.64 90.0 0.0890 68.4 0.1274 -102.7 900 0.366 -176.1 5.87 87.7 0.0991 69.6 0.1061 -110.4 1000 0.370 -179.9 5.33 85.4 0.1081 70.1 0.0893 -117.9 1100 0.373 174.6 4.87 83.7 0.1178 70.6 0.0768 -126.7 1200 0.387 172.5 4.47 81.8 0.1274 71.1 0.0685 -138.6 1300 0.379 168.0 4.16 80.4 0.1375 71.4 0.0630 -150.7 1400 0.409 164.7 3.85 78.9 0.1473 71.7 0.0603 -162.8 1500 0.399 163.4 3.64 77.1 0.1568 71.6 0.0596 -175.0 1600 0.419 159.1 3.43 75.7 0.1667 71.8 0.0631 174.3 1700 0.427 159.5 3.24 73.9 0.1765 71.8 0.0681 166.3 1800 0.427 156.2 3.09 73.2 0.1862 71.3 0.0757 157.4 1900 0.446 154.6 2.93 71.8 0.1963 71.7 0.0829 152.5 2000 0.444 153.5 2.80 70.2 0.2057 71.4 0.0914 146.9
2sC5702 15 package dimensions 0.9 0.1 1.4 0.05 1.2 0.05 0.8 0.1 3-0.2 +0.1 -0.05 0.2 0.2 0.45 0.45 (0.1) (0.1) 0.6 max hitachi code jedec eiaj mass (reference value) mfpak 0.0016 g unit: mm 0.15 +0.1 e0.05
2sC5702 16 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 3.0

▲Up To Search▲

Price & Availability of C5702

	To Download C5702 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .